FDMS7658AS n-channel powertrench ? syncfet tm ?2009 fairchild semiconductor corporation FDMS7658AS rev.c www.fairchildsemi.com 1 september 2009 FDMS7658AS n-channel powertrench ? syncfet tm 30 v, 49 a, 1.9 m ? features ? max r ds(on) = 1.9 m ? at v gs = 10 v, i d = 28 a ? max r ds(on) = 2.2 m ? at v gs = 7 v, i d = 26 a ? advanced package and silic on combination for low r ds(on) and high efficiency ? syncfet schottky body diode ? msl1 robust package design ? 100% uil tested ? rohs compliant general description the FDMS7658AS has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for dc/dc converters ? notebook vcore/ gpu low side switch ? networking point of load low side switch ? telecom secondary side rectification mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 49 a -continuous (silicon limited) t c = 25 c 177 -continuous t a = 25 c (note 1a) 29 -pulsed 150 dv/dt mosfet dv/dt 1.5 v/ns e as single pulse avalanche energy (note 3) 162 mj p d power dissipation t c = 25 c 89 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.4 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS7658AS FDMS7658AS power 56 13 ?? 12 mm 3000 units 4 3 2 1 5 6 7 8 power 56 d d d d s s s g d d d d g s s s pin 1 bottom top
FDMS7658AS n-channel powertrench ? syncfet tm FDMS7658AS rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 23 mv / c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 p a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1.2 1.7 3.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c - 5 mv/ c r ds(on) static drain to source on resistance v gs = 10 v, i d = 28 a 1.5 1.9 m : v gs = 7 v, i d = 26 a 1.7 2.2 v gs = 4.5 v, i d = 23 a 1.9 2.4 v gs = 10 v, i d = 28 a, t j = 125 c 2.0 2.6 g fs forward transconductance v ds = 5 v, i d = 28 a 181 s (note 2) dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 5525 7350 pf c oss output capacitance 2020 2685 pf c rss reverse transfer capacitance 150 230 pf r g gate resistance 0.4 0.9 : switching characteristics t d(on) turn-on delay time v dd = 15 v, i d = 28 a, v gs = 10 v, r gen = 6 : 20 36 ns t r rise time 8 17 ns t d(off) turn-off delay time 43 70 ns t f fall time 5 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 28 a 78 109 nc q g total gate charge v gs = 0 v to 4.5 v 35 49 nc q gs gate to source gate charge 16.4 nc q gd gate to drain ?miller? charge 6.6 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.38 0.9 v v gs = 0 v, i s = 28 a (note 2) 0.74 1.3 t rr reverse recovery time i f = 28 a, di/dt = 300 a/ p s 46 75 ns q rr reverse recovery charge 73 117 nc notes : 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3. e as of 162 mj is based on starting t j = 25 c, l = 1 mh, i as = 18 a, v dd = 27 v, v gs = 10 v. 100% test at l = 0.3 mh, i as = 28 a. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper.
FDMS7658AS n-channel powertrench ? syncfet tm FDMS7658AS rev.c www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 30 60 90 120 150 v gs = 3.5 v v gs = 10 v v gs = 3 v v gs = 4 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 30 60 90 120 150 0 1 2 3 4 5 v gs = 4 v v gs = 4.5 v normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 3.5 v v gs = 3 v pulse duration = 80 p s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 28 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 2 4 6 8 t j = 125 o c i d = 28 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 30 60 90 120 150 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 300 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS7658AS n-channel powertrench ? syncfet tm FDMS7658AS rev.c www.fairchildsemi.com 4 figure 7. 0 20406080 0 2 4 6 8 10 i d = 28 a v dd = 15 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 50 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 500 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 30 60 90 120 150 180 limited by package r t jc = 1.4 o c/w v gs = 4.5 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100200 0.01 0.1 1 10 100 300 1 s dc 100 ms 10 ms 1 ms 10 s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c figure 12. 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) single pulse r t ja = 125 o c/w t a = 25 o c s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDMS7658AS n-channel powertrench ? syncfet tm FDMS7658AS rev.c www.fairchildsemi.com 5 figure 13. junction-to-ambient transient thermal response curve 10 -3 10 -2 10 -1 110 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS7658AS n-channel powertrench ? syncfet tm FDMS7658AS rev.c www.fairchildsemi.com 6 syncfet schottky body diode characteristics fairchild?s syncfet process emb eds a schottky diode in parallel with powertrench mosfet. th is diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 14 shows the reverses recovery characteristic of the FDMS7658AS. schottky barrier diodes exhibit significant leakage at high tem - perature and high reverse voltage. this will increase the power in the device. typical char acteristics (continued) figure 14. FDMS7658AS syncfet body diode reverse recovery characteristic figure 15. syncfet body diode reverses leakage versus drain-source voltage 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) 0 50 100 150 200 -5 0 5 10 15 20 25 30 di/dt = 300 a/ s current (a) time (ns)
FDMS7658AS n-channel powertrench ? syncfet tm FDMS7658AS rev.c www.fairchildsemi.com 7 dimensional outlin e and pad layout
FDMS7658AS rev.c www.fairchildsemi.com 8 FDMS7658AS n-channel powertrench ? syncfet tm trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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